DE3676019D1 - Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung. - Google Patents
Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung.Info
- Publication number
- DE3676019D1 DE3676019D1 DE8686112178T DE3676019T DE3676019D1 DE 3676019 D1 DE3676019 D1 DE 3676019D1 DE 8686112178 T DE8686112178 T DE 8686112178T DE 3676019 T DE3676019 T DE 3676019T DE 3676019 D1 DE3676019 D1 DE 3676019D1
- Authority
- DE
- Germany
- Prior art keywords
- epitactic
- production
- gallium arsenide
- arsenide semiconductor
- semiconductor disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
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- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S438/938—Lattice strain control or utilization
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19562885A JPS6258614A (ja) | 1985-09-03 | 1985-09-03 | 砒素化ガリウムエピタキシヤルウエハ及びその製造方法 |
JP19562985A JPS6258615A (ja) | 1985-09-03 | 1985-09-03 | 砒素化ガリウム系化合物半導体装置 |
JP19563085A JPS6258616A (ja) | 1985-09-03 | 1985-09-03 | 砒素化ガリウムエピタキシヤルウエハ及びその製造方法 |
JP60195435A JPS6258690A (ja) | 1985-09-04 | 1985-09-04 | 砒素化ガリウム系半導体発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3676019D1 true DE3676019D1 (de) | 1991-01-17 |
Family
ID=27475763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686112178T Expired - Fee Related DE3676019D1 (de) | 1985-09-03 | 1986-09-03 | Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung. |
Country Status (4)
Country | Link |
---|---|
US (2) | US4928154A (de) |
EP (1) | EP0214610B1 (de) |
CA (1) | CA1292550C (de) |
DE (1) | DE3676019D1 (de) |
Families Citing this family (112)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6288318A (ja) * | 1985-10-14 | 1987-04-22 | Sharp Corp | 半導体装置の製造方法 |
JPS63226918A (ja) * | 1987-03-16 | 1988-09-21 | Shin Etsu Handotai Co Ltd | 燐化砒化ガリウム混晶エピタキシヤルウエ−ハ |
US5130269A (en) * | 1988-04-27 | 1992-07-14 | Fujitsu Limited | Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same |
JPH0760791B2 (ja) * | 1988-11-04 | 1995-06-28 | シャープ株式会社 | 化合物半導体基板 |
JPH02235327A (ja) * | 1989-03-08 | 1990-09-18 | Fujitsu Ltd | 半導体成長装置および半導体成長方法 |
JP3114809B2 (ja) * | 1989-05-31 | 2000-12-04 | 富士通株式会社 | 半導体装置 |
US5164359A (en) * | 1990-04-20 | 1992-11-17 | Eaton Corporation | Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate |
US5281834A (en) * | 1990-08-31 | 1994-01-25 | Motorola, Inc. | Non-silicon and silicon bonded structure and method of manufacture |
US5723871A (en) * | 1991-05-02 | 1998-03-03 | Daido Tokushuko Kabushiki Kaisha | Process of emitting highly spin-polarized electron beam and semiconductor device therefor |
DE69201095T2 (de) * | 1991-05-02 | 1995-05-18 | Daido Steel Co Ltd | Halbleitereinrichtung für hohen spinpolarisierten Elektronenstrahl. |
US5448084A (en) * | 1991-05-24 | 1995-09-05 | Raytheon Company | Field effect transistors on spinel substrates |
CA2062134C (en) * | 1991-05-31 | 1997-03-25 | Ibm | Heteroepitaxial layers with low defect density and arbitrary network parameter |
US5208182A (en) * | 1991-11-12 | 1993-05-04 | Kopin Corporation | Dislocation density reduction in gallium arsenide on silicon heterostructures |
GB2263814B (en) * | 1992-01-17 | 1996-01-10 | Northern Telecom Ltd | Semiconductor mixed crystal quantum well device manufacture |
FR2691839B1 (fr) * | 1992-05-27 | 1994-08-05 | Schlumberger Ind Sa | Capteur a effet hall. |
US5747862A (en) * | 1992-09-25 | 1998-05-05 | Katsumi Kishino | Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror |
JP2576766B2 (ja) * | 1993-07-08 | 1997-01-29 | 日本電気株式会社 | 半導体基板の製造方法 |
US5536948A (en) * | 1994-08-23 | 1996-07-16 | Grumman Aerospace Corporation | Infrared detector element substrate with superlattice layers |
US5456206A (en) * | 1994-12-07 | 1995-10-10 | Electronics And Telecommunications Research Institute | Method for two-dimensional epitaxial growth of III-V compound semiconductors |
US5833749A (en) * | 1995-01-19 | 1998-11-10 | Nippon Steel Corporation | Compound semiconductor substrate and process of producing same |
JP3268731B2 (ja) | 1996-10-09 | 2002-03-25 | 沖電気工業株式会社 | 光電変換素子 |
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US6423990B1 (en) | 1997-09-29 | 2002-07-23 | National Scientific Corporation | Vertical heterojunction bipolar transistor |
JP3420087B2 (ja) * | 1997-11-28 | 2003-06-23 | Necエレクトロニクス株式会社 | 半導体発光素子 |
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FR2225207B1 (de) * | 1973-04-16 | 1978-04-21 | Ibm | |
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US4558336A (en) * | 1984-03-02 | 1985-12-10 | The United States Of America As Represented By The Secretary Of The Army | MBE Growth technique for matching superlattices grown on GaAs substrates |
JPS6191098A (ja) * | 1984-10-09 | 1986-05-09 | Daido Steel Co Ltd | シリコン基板上における砒素化ガリウム成長結晶体とその結晶成長方法 |
JPS61145820A (ja) * | 1984-12-20 | 1986-07-03 | Seiko Epson Corp | 半導体薄膜材料 |
JPS621224A (ja) * | 1985-06-26 | 1987-01-07 | Sharp Corp | 半導体素子構造 |
US4774205A (en) * | 1986-06-13 | 1988-09-27 | Massachusetts Institute Of Technology | Monolithic integration of silicon and gallium arsenide devices |
US4826784A (en) * | 1987-11-13 | 1989-05-02 | Kopin Corporation | Selective OMCVD growth of compound semiconductor materials on silicon substrates |
US4835116A (en) * | 1987-11-13 | 1989-05-30 | Kopin Corporation | Annealing method for III-V deposition |
-
1986
- 1986-09-03 DE DE8686112178T patent/DE3676019D1/de not_active Expired - Fee Related
- 1986-09-03 CA CA000517386A patent/CA1292550C/en not_active Expired - Lifetime
- 1986-09-03 EP EP19860112178 patent/EP0214610B1/de not_active Expired - Lifetime
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1989
- 1989-03-20 US US07/325,115 patent/US4928154A/en not_active Expired - Fee Related
-
1990
- 1990-02-22 US US07/483,364 patent/US4963508A/en not_active Expired - Fee Related
Also Published As
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EP0214610A3 (en) | 1987-12-02 |
EP0214610A2 (de) | 1987-03-18 |
US4963508A (en) | 1990-10-16 |
CA1292550C (en) | 1991-11-26 |
EP0214610B1 (de) | 1990-12-05 |
US4928154A (en) | 1990-05-22 |
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