DE3676019D1 - Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung. - Google Patents

Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung.

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Publication number
DE3676019D1
DE3676019D1 DE8686112178T DE3676019T DE3676019D1 DE 3676019 D1 DE3676019 D1 DE 3676019D1 DE 8686112178 T DE8686112178 T DE 8686112178T DE 3676019 T DE3676019 T DE 3676019T DE 3676019 D1 DE3676019 D1 DE 3676019D1
Authority
DE
Germany
Prior art keywords
epitactic
production
gallium arsenide
arsenide semiconductor
semiconductor disc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8686112178T
Other languages
English (en)
Inventor
Nasayoshi Umeno
Shiro Sakai
Shinichiro Yahagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Nagoya Institute of Technology NUC
Original Assignee
Daido Steel Co Ltd
Nagoya Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19562985A external-priority patent/JPS6258615A/ja
Priority claimed from JP19562885A external-priority patent/JPS6258614A/ja
Priority claimed from JP19563085A external-priority patent/JPS6258616A/ja
Priority claimed from JP60195435A external-priority patent/JPS6258690A/ja
Application filed by Daido Steel Co Ltd, Nagoya Institute of Technology NUC filed Critical Daido Steel Co Ltd
Application granted granted Critical
Publication of DE3676019D1 publication Critical patent/DE3676019D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
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    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10S148/00—Metal treatment
    • Y10S148/16—Superlattice
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization
DE8686112178T 1985-09-03 1986-09-03 Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung. Expired - Fee Related DE3676019D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP19562985A JPS6258615A (ja) 1985-09-03 1985-09-03 砒素化ガリウム系化合物半導体装置
JP19562885A JPS6258614A (ja) 1985-09-03 1985-09-03 砒素化ガリウムエピタキシヤルウエハ及びその製造方法
JP19563085A JPS6258616A (ja) 1985-09-03 1985-09-03 砒素化ガリウムエピタキシヤルウエハ及びその製造方法
JP60195435A JPS6258690A (ja) 1985-09-04 1985-09-04 砒素化ガリウム系半導体発光素子

Publications (1)

Publication Number Publication Date
DE3676019D1 true DE3676019D1 (de) 1991-01-17

Family

ID=27475763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686112178T Expired - Fee Related DE3676019D1 (de) 1985-09-03 1986-09-03 Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung.

Country Status (4)

Country Link
US (2) US4928154A (de)
EP (1) EP0214610B1 (de)
CA (1) CA1292550C (de)
DE (1) DE3676019D1 (de)

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288318A (ja) * 1985-10-14 1987-04-22 Sharp Corp 半導体装置の製造方法
JPS63226918A (ja) * 1987-03-16 1988-09-21 Shin Etsu Handotai Co Ltd 燐化砒化ガリウム混晶エピタキシヤルウエ−ハ
US5130269A (en) * 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
JPH0760791B2 (ja) * 1988-11-04 1995-06-28 シャープ株式会社 化合物半導体基板
JPH02235327A (ja) * 1989-03-08 1990-09-18 Fujitsu Ltd 半導体成長装置および半導体成長方法
JP3114809B2 (ja) * 1989-05-31 2000-12-04 富士通株式会社 半導体装置
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5281834A (en) * 1990-08-31 1994-01-25 Motorola, Inc. Non-silicon and silicon bonded structure and method of manufacture
EP0512429B1 (de) * 1991-05-02 1995-01-04 Daido Tokushuko Kabushiki Kaisha Halbleitereinrichtung für hohen spinpolarisierten Elektronenstrahl
US5723871A (en) * 1991-05-02 1998-03-03 Daido Tokushuko Kabushiki Kaisha Process of emitting highly spin-polarized electron beam and semiconductor device therefor
US5448084A (en) * 1991-05-24 1995-09-05 Raytheon Company Field effect transistors on spinel substrates
CA2062134C (en) * 1991-05-31 1997-03-25 Ibm Heteroepitaxial layers with low defect density and arbitrary network parameter
US5208182A (en) * 1991-11-12 1993-05-04 Kopin Corporation Dislocation density reduction in gallium arsenide on silicon heterostructures
GB2263814B (en) * 1992-01-17 1996-01-10 Northern Telecom Ltd Semiconductor mixed crystal quantum well device manufacture
FR2691839B1 (fr) * 1992-05-27 1994-08-05 Schlumberger Ind Sa Capteur a effet hall.
US5747862A (en) * 1992-09-25 1998-05-05 Katsumi Kishino Spin-polarized electron emitter having semiconductor opto-electronic layer with split valence band and reflecting mirror
JP2576766B2 (ja) * 1993-07-08 1997-01-29 日本電気株式会社 半導体基板の製造方法
US5536948A (en) * 1994-08-23 1996-07-16 Grumman Aerospace Corporation Infrared detector element substrate with superlattice layers
US5456206A (en) * 1994-12-07 1995-10-10 Electronics And Telecommunications Research Institute Method for two-dimensional epitaxial growth of III-V compound semiconductors
US5833749A (en) * 1995-01-19 1998-11-10 Nippon Steel Corporation Compound semiconductor substrate and process of producing same
JP3268731B2 (ja) * 1996-10-09 2002-03-25 沖電気工業株式会社 光電変換素子
US5912481A (en) 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US6423990B1 (en) * 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
JP3420087B2 (ja) * 1997-11-28 2003-06-23 Ｎｅｃエレクトロニクス株式会社 半導体発光素子
US6563661B2 (en) 2000-02-08 2003-05-13 Seagate Technology Llc Drive-level bearing friction measurement method
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
EP1290733A1 (de) 2000-05-31 2003-03-12 Motorola, Inc. Halbleiterbauelement und dessen herstellungsverfahren
AU2001264987A1 (en) * 2000-06-30 2002-01-14 Motorola, Inc., A Corporation Of The State Of Delware Hybrid semiconductor structure and device
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
AU2001274913A1 (en) * 2000-06-30 2002-01-14 Motorola, Inc. Thin compound semiconductor structure
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
WO2002009187A2 (en) 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6638838B1 (en) * 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
US20020195599A1 (en) * 2001-06-20 2002-12-26 Motorola, Inc. Low-defect semiconductor structure, device including the structure and method for fabricating structure and device
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6730987B2 (en) * 2001-09-10 2004-05-04 Showa Denko K.K. Compound semiconductor device, production method thereof, light-emitting device and transistor
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
AU2001297613A1 (en) * 2001-11-08 2003-06-10 Midwest Research Institute Reactive codoping of gaalinp compound semiconductors
AU2002230804A1 (en) * 2001-12-14 2003-06-30 Midwest Research Institute Multi-junction solar cell device
US7309832B2 (en) * 2001-12-14 2007-12-18 Midwest Research Institute Multi-junction solar cell device
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
AU2003295937A1 (en) * 2002-11-25 2004-06-18 The University Of Toledo Integrated photoelectrochemical cell and system having a solid polymer electrolyte
DE10393792T5 (de) * 2002-11-27 2005-11-03 The University Of Toledo, Toledo Integrierte photoelektrochemische Zelle und System mit einem flüssigen Elektrolyten
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6786390B2 (en) * 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
JP2004265945A (ja) * 2003-02-21 2004-09-24 Sumitomo Chem Co Ltd 半導体エピタキシャル結晶ウエハの品質判定方法並びにこれを用いたウエハ製造方法
US7109465B2 (en) * 2003-04-04 2006-09-19 Avago Technologies Ecbu Ip (Singapore) Pte., Ltd. System and method for converting ambient light energy into a digitized electrical output signal for controlling display and keypad illumination on a battery powered system
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
US20080223439A1 (en) * 2004-02-19 2008-09-18 Xunming Deng Interconnected Photoelectrochemical Cell
US20060011129A1 (en) * 2004-07-14 2006-01-19 Atomic Energy Council - Institute Of Nuclear Energy Research Method for fabricating a compound semiconductor epitaxial wafer
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
KR100641063B1 (ko) * 2005-08-26 2006-11-01 삼성전자주식회사 단결정 구조물 형성 방법 및 이를 이용한 반도체 장치의제조 방법
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US20070252216A1 (en) * 2006-04-28 2007-11-01 Infineon Technologies Ag Semiconductor device and a method of manufacturing such a semiconductor device
EP2062290B1 (de) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defektreduzierung durch kontrolle des aspektverhältnisses
US7541105B2 (en) * 2006-09-25 2009-06-02 Seagate Technology Llc Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR101093588B1 (ko) 2007-09-07 2011-12-15 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 멀티-정션 솔라 셀
WO2009119074A1 (ja) * 2008-03-25 2009-10-01 国立大学法人名古屋大学 スピン偏極電子発生素子
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
EP2528087B1 (de) 2008-09-19 2016-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Formierung von Geräten durch übermässiges Wachstum der Epitaxialschicht
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
WO2010114956A1 (en) 2009-04-02 2010-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Devices formed from a non-polar plane of a crystalline material and method of making the same
US20110073887A1 (en) * 2009-09-25 2011-03-31 Alliance For Sustainable Energy, Llc Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter
US20120080753A1 (en) * 2010-10-01 2012-04-05 Applied Materials, Inc. Gallium arsenide based materials used in thin film transistor applications
JP5852660B2 (ja) 2010-10-12 2016-02-03 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー 高効率なオプトエレクトロニクスのための大きなバンドギャップをもつｉｉｉ−ｖ族化合物
DE102011107657A1 (de) 2011-07-12 2013-01-17 Nasp Iii/V Gmbh Monolithische integrierte Halbleiterstruktur
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
US9882009B2 (en) 2013-08-23 2018-01-30 Intel Corporation High resistance layer for III-V channel deposited on group IV substrates for MOS transistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2225207B1 (de) * 1973-04-16 1978-04-21 Ibm
US4120706A (en) * 1977-09-16 1978-10-17 Harris Corporation Heteroepitaxial deposition of gap on silicon substrates
US4675709A (en) * 1982-06-21 1987-06-23 Xerox Corporation Quantized layered structures with adjusted indirect bandgap transitions
JPS5973499A (ja) * 1982-10-15 1984-04-25 Agency Of Ind Science & Technol 化合物半導体の成長方法
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
US4632712A (en) * 1983-09-12 1986-12-30 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth
US4558336A (en) * 1984-03-02 1985-12-10 The United States Of America As Represented By The Secretary Of The Army MBE Growth technique for matching superlattices grown on GaAs substrates
JPS6191098A (ja) * 1984-10-09 1986-05-09 Daido Steel Co Ltd シリコン基板上における砒素化ガリウム成長結晶体とその結晶成長方法
JPS61145820A (ja) * 1984-12-20 1986-07-03 Seiko Epson Corp 半導体薄膜材料
JPS621224A (ja) * 1985-06-26 1987-01-07 Sharp Corp 半導体素子構造
US4774205A (en) * 1986-06-13 1988-09-27 Massachusetts Institute Of Technology Monolithic integration of silicon and gallium arsenide devices
US4826784A (en) * 1987-11-13 1989-05-02 Kopin Corporation Selective OMCVD growth of compound semiconductor materials on silicon substrates
US4835116A (en) * 1987-11-13 1989-05-30 Kopin Corporation Annealing method for III-V deposition

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